ANNA Uviversity RF And Microwave Engineering Notes
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Syllabus:
UNIT II RFTRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS 9
Amplifier power relation, stability considerations, gain considerations noise figure,impedance matching networks, frequency response, T and Π matching networks,microstripline matching networks
UNIT III MICROWAVE PASSIVE COMPONENTS 9
Microwave frequency range, significance of microwave frequency range - applications of microwaves. Scattering matrix -Concept of N port scattering matrix representation-Properties of S matrix- S matrix formulation of two-port junction. Microwave junctions -Tee junctions -Magic Tee - Rat race - Corners - bends and twists - Directional couplers -two hole directional couplers- Ferrites - important microwave properties and applications – Termination - Gyrator- Isolator-Circulator - Attenuator - Phase changer – S Matrix for microwave components – Cylindrical cavity resonators.
UNIT IV MICROWAVE SEMICONDUCTOR DEVICES 9
Microwave semiconductor devices- operation - characteristics and application of BJTs and FETs -Principles of tunnel diodes - Varactor and Step recovery diodes - Transferred Electron Devices -Gunn diode- Avalanche Transit time devices- IMPATT and TRAPATT devices. Parametric devices -Principles of operation - applications of parametric amplifier .Microwave monolithic integrated circuit (MMIC) - Materials and fabrication techniques
UNIT V MICROWAVE TUBES AND MEASUREMENTS 9
Microwave tubes- High frequency limitations - Principle of operation of Multicavity Klystron, Reflex Klystron, Traveling Wave Tube, Magnetron. Microwave measurements: Measurement of power, wavelength, impedance, SWR, attenuation, Q and Phase shift.
Syllabus:
UNIT I TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION 9
Low frequency parameters-impedance ,admittance, hybrid and ABCD. High frequency parameters-Formulation of S parameters, properties of S parameters-Reciprocal and lossless networks, transmission matrix, Introduction to component basics, wire, resistor,capacitor and inductor, applications of RF
Low frequency parameters-impedance ,admittance, hybrid and ABCD. High frequency parameters-Formulation of S parameters, properties of S parameters-Reciprocal and lossless networks, transmission matrix, Introduction to component basics, wire, resistor,capacitor and inductor, applications of RF
UNIT II RFTRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS 9
Amplifier power relation, stability considerations, gain considerations noise figure,impedance matching networks, frequency response, T and Π matching networks,microstripline matching networks
UNIT III MICROWAVE PASSIVE COMPONENTS 9
Microwave frequency range, significance of microwave frequency range - applications of microwaves. Scattering matrix -Concept of N port scattering matrix representation-Properties of S matrix- S matrix formulation of two-port junction. Microwave junctions -Tee junctions -Magic Tee - Rat race - Corners - bends and twists - Directional couplers -two hole directional couplers- Ferrites - important microwave properties and applications – Termination - Gyrator- Isolator-Circulator - Attenuator - Phase changer – S Matrix for microwave components – Cylindrical cavity resonators.
UNIT IV MICROWAVE SEMICONDUCTOR DEVICES 9
Microwave semiconductor devices- operation - characteristics and application of BJTs and FETs -Principles of tunnel diodes - Varactor and Step recovery diodes - Transferred Electron Devices -Gunn diode- Avalanche Transit time devices- IMPATT and TRAPATT devices. Parametric devices -Principles of operation - applications of parametric amplifier .Microwave monolithic integrated circuit (MMIC) - Materials and fabrication techniques
UNIT V MICROWAVE TUBES AND MEASUREMENTS 9
Microwave tubes- High frequency limitations - Principle of operation of Multicavity Klystron, Reflex Klystron, Traveling Wave Tube, Magnetron. Microwave measurements: Measurement of power, wavelength, impedance, SWR, attenuation, Q and Phase shift.
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